| PART |
Description |
Maker |
| T2G6003028-FS-EVB1 T2G6003028-FS-15 T2G6003028-FS- |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G6003028-FS T1G6003028-FSEVB1 T1G6003028-FS-15 |
30W, 28V, DC ?6 GHz, GaN RF Power Transistor
30W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CMPA801B025D |
25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA601C025F |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA1D1E030D |
30 W, 13.75 - 14.5 GHz, 40 V, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| T1G4003532-FL-15 T1G4003532-FS T1G4003532-FL-EVB1 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| CMPA1D1E025F CMPA1D1E025F-AMP |
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
|
Cree, Inc
|
| QPC1006EVB |
0.15 ?2.8 GHz High Power GaN SP3T Switch
|
TriQuint Semiconductor
|
| MAGX-001220-1SB1PPR MAGX-001220-100L00 MAGX-001220 |
GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MAPRST1214-30UF |
Radar Pulsed Power Transistor 30W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty
|
M/A-COM Technology Solutions, Inc.
|
| PH3135-30M |
Radar Pulsed Power Transistor 30W, 3.1-3.5 GHz, 100楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
|
